D. Ielmini: search on Z-Library

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1

Resistive Switching (From Fundamentals of Nanoionic Redox Processes to Memristive Device Applications) || Introduction to Nanoionic Elements for Information Technology

Ielmini, Daniele, Waser, Rainer

Year:

2016

Language:

english

File:

PDF, 1.66 MB

english, 2016

2

Memristive and CMOS Devices for Neuromorphic Computing

Milo, Valerio, Malavena, Gerardo, Monzio Compagnoni, Christian, Ielmini, Daniele

Journal:

Year:

2020

Language:

english

File:

PDF, 6.53 MB

english, 2020

3

Physics-based modeling approaches of resistive switching devices for memory and in-memory computing applications

Ielmini, D., Milo, V.

Journal:

Journal of Computational Electronics

Year:

2017

Language:

english

File:

PDF, 10.74 MB

english, 2017

4

A Comparative Study of Characterization Techniques for Oxide Reliability in Flash Memories

Ielmini, D., Spinelli, A.S., Lacaita, A.L., vanDuuren, M.J.

Journal:

IEEE Transactions on Device and Materials Reliability

Year:

2004

Language:

english

File:

PDF, 429 KB

english, 2004

5

Improving Floating-Gate Memory Reliability by Nanocrystal Storage and Pulsed Tunnel Programming

Puzzilli, G., Caputo, D., Irrera, F., MonzioCompagnoni, C., Ielmini, D., Spinelli, A.S., Lacaita, A.L., Gerardi, C.

Journal:

IEEE Transactions on Device and Materials Reliability

Year:

2004

Language:

english

File:

PDF, 600 KB

english, 2004

6

Reliability Study of Phase-Change Nonvolatile Memories

Pirovano, A., Redaelli, A., Pellizzer, F., Ottogalli, F., Tosi, M., Ielmini, D., Lacaita, A.L., Bez, R.

Journal:

IEEE Transactions on Device and Materials Reliability

Year:

2004

Language:

english

File:

PDF, 604 KB

english, 2004

7

A recombination model for transient and stationary stress-induced leakage current

D Ielmini, A.S Spinelli, A.L Lacaita, A Martinelli, G Ghidini

Journal:

Microelectronics Reliability

Year:

2000

Language:

english

File:

PDF, 204 KB

english, 2000

8

In-memory computing with resistive switching devices

Ielmini, Daniele, Wong, H.-S. Philip

Journal:

Nature Electronics

Year:

2018

Language:

english

File:

PDF, 2.44 MB

english, 2018

9

[IEEE 2020 IEEE International Symposium on Circuits and Systems (ISCAS) - Sevilla (2020.10.12-2020.10.14)] 2020 IEEE International Symposium on Circuits and Systems (ISCAS) - A Bio-Inspired Recurrent Neural Network with Self-Adaptive Neurons and PCM Synapses for Solving Reinforcement Learning Tasks

Bianchi, S., Munoz-Martin, I., Hashemkhani, S., Pedretti, G., Ielmini, D.

Year:

2020

File:

PDF, 2.22 MB

2020

10

Solving matrix equations in one step with cross-point resistive arrays

Sun, Zhong, Pedretti, Giacomo, Ambrosi, Elia, Bricalli, Alessandro, Wang, Wei, Ielmini, Daniele

Journal:

Proceedings of the National Academy of Sciences

Year:

2019

Language:

english

File:

PDF, 897 KB

english, 2019

11

Modeling the Universal Set/Reset Characteristics of Bipolar RRAM by Field- and Temperature-Driven Filament Growth

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 823 KB

english, 2011

12

Recent developments on Flash memory reliability

D. Ielmini, A.S. Spinelli, A.L. Lacaita

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 648 KB

english, 2005

13

Electronic switching effect and phase-change transition in chalcogenide materials

Redaelli, A., Pirovano, A., Pellizzer, F., Lacaita, A.L., Ielmini, D., Bez, R.

Journal:

IEEE Electron Device Letters

Year:

2004

Language:

english

File:

PDF, 100 KB

english, 2004

14

Recent Advances on the Modeling of Phase Change Materials and Devices

Lacaita, Andrea Leonardo, Russo, Ugo, Ielmini, Daniele

Journal:

MRS Proceedings

Year:

2008

Language:

english

File:

PDF, 766 KB

english, 2008

15

[IEEE 2018 IEEE International Symposium on Circuits and Systems (ISCAS) - Florence, Italy (2018.5.27-2018.5.30)] 2018 IEEE International Symposium on Circuits and Systems (ISCAS) - Resistive switching synapses for unsupervised learning in feed-forward and recurrent neural networks

Milo, V., Pedretti, G., Laudato, M., Bricalli, A., Ambrosi, E., Bianchi, S., Chicca, E., Ielmini, D.

Year:

2018

Language:

english

File:

PDF, 2.04 MB

english, 2018

16

BrainâInspired Structural Plasticity through Reweighting and Rewiring in MultiâTerminal SelfâOrganizing Memristive Nanowire Networks

Milano, Gianluca, Pedretti, Giacomo, Fretto, Matteo, Boarino, Luca, Benfenati, Fabio, Ielmini, Daniele, Valov, Ilia, Ricciardi, Carlo

Journal:

Advanced Intelligent Systems

Year:

2020

File:

PDF, 16.22 MB

2020

17

Resilience and recovery style: a retrospective study on associations among personal resources, symptoms, neurocognition, quality of life and psychosocial functioning in psychotic patients

Zizolfi, Daniele, Poloni, Nicola, Caselli, Ivano, Ielmini, Marta, Lucca, Giulia, Diurni, Marcello, Cavallini, Greta, Callegari, Camilla

Journal:

Psychology Research and Behavior Management

Year:

2019

Language:

english

File:

PDF, 316 KB

english, 2019

18

[IEEE 2020 IEEE International Symposium on Circuits and Systems (ISCAS) - Sevilla (2020.10.12-2020.10.14)] 2020 IEEE International Symposium on Circuits and Systems (ISCAS) - Hardware Implementation of PCM-Based Neurons with Self-Regulating Threshold for Homeostatic Scaling in Unsupervised Learning

Munoz-Martin, I., Bianchi, S., Hashemkhani, S., Pedretti, G., Ielmini, D.

Year:

2020

File:

PDF, 1.46 MB

2020

19

Control of filament size and reduction of reset current below 10 μA in NiO resistance switching memories

F. Nardi, D. Ielmini, C. Cagli, S. Spiga, M. Fanciulli, L. Goux, D.J. Wouters

Journal:

Solid-State Electronics

Year:

2011

Language:

english

File:

PDF, 1.03 MB

english, 2011

20

Logic Computation in Phase Change Materials by Threshold and Memory Switching

Cassinerio, M., Ciocchini, N., Ielmini, D.

Journal:

Advanced Materials

Year:

2013

Language:

english

File:

PDF, 914 KB

english, 2013

21

True Random Number Generation by Variability of Resistive Switching in Oxide-Based Devices

Balatti, Simone, Ambrogio, Stefano, Wang, Zhongqiang, Ielmini, Daniele

Journal:

IEEE Journal on Emerging and Selected Topics in Circuits and Systems

Year:

2015

Language:

english

File:

PDF, 1.74 MB

english, 2015

22

[IEEE ESSDERC 2016 - 46th European Solid-State Device Research Conference - Lausanne, Switzerland (2016.9.12-2016.9.15)] 2016 46th European Solid-State Device Research Conference (ESSDERC) - Bipolar-switching operated phase change memory (PCM) for improved high-temperature reliability

Ciocchini, N., Laudato, M., Lacaita, A. L., Ielmini, D., Boniardi, M., Varesi, E., Fantini, P.

Year:

2016

Language:

english

File:

PDF, 1.34 MB

english, 2016

23

Resistive Switching (From Fundamentals of Nanoionic Redox Processes to Memristive Device Applications) || Electroforming Processes in Metal Oxide Resistive-Switching Cells

Ielmini, Daniele, Waser, Rainer

Year:

2016

Language:

english

File:

PDF, 1.42 MB

english, 2016

24

Complementary Switching in Oxide-Based Bipolar Resistive-Switching Random Memory

Nardi, Federico, Balatti, Simone, Larentis, Stefano, Gilmer, David C., Ielmini, Daniele

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 1.33 MB

english, 2013

25

Explanation of programming distributions in phase-change memory arrays based on crystallization time statistics

D. Mantegazza, D. Ielmini, A. Pirovano, A.L. Lacaita, E. Varesi, F. Pellizzer, R. Bez

Journal:

Solid-State Electronics

Year:

2008

Language:

english

File:

PDF, 493 KB

english, 2008

26

The 6-D Model of National Culture as a Tool to Examine Cultural Interpretation of Migration Trauma-Related Dissociative Disorder: A Case Series

Callegari, C., Ielmini, M., Caselli, I., Mattia, M., Gasparini, A., Grossi, A., Ceccon, F., Poloni, N.

Journal:

Journal of Immigrant and Minority Health

Year:

2019

Language:

english

File:

PDF, 617 KB

english, 2019

27

[IEEE 2014 IEEE International Symposium on Circuits and Systems (ISCAS) - Melbourne VIC, Australia (2014.6.1-2014.6.5)] 2014 IEEE International Symposium on Circuits and Systems (ISCAS) - Statistical modeling of program and read variability in resistive switching devices

Ambrogio, S., Balatti, S., Cubeta, A., Ielmini, D.

Year:

2014

Language:

english

File:

PDF, 1014 KB

english, 2014

28

Neuromorphic Learning and Recognition With One-Transistor-One-Resistor Synapses and Bistable Metal Oxide RRAM

Ambrogio, Stefano, Balatti, Simone, Milo, Valerio, Carboni, Roberto, Wang, Zhong-Qiang, Calderoni, Alessandro, Ramaswamy, Nirmal, Ielmini, Daniele

Journal:

IEEE Transactions on Electron Devices

Year:

2016

Language:

english

File:

PDF, 3.85 MB

english, 2016

29

Reliability issues and modeling of Flash and post-Flash memory (Invited Paper)

Daniele Ielmini

Journal:

Microelectronic Engineering

Year:

2009

Language:

english

File:

PDF, 678 KB

english, 2009

30

Status and challenges of phase change memory modeling

A.L. Lacaita, D. Ielmini, D. Mantegazza

Journal:

Solid-State Electronics

Year:

2008

Language:

english

File:

PDF, 995 KB

english, 2008

31

Impact of gate stack process on conduction and reliability of 0.18 μm PMOSFET

G. Ghidini, A. Garavaglia, G. Giusto, A. Ghetti, R. Bottini, D. Peschiaroli, M. Scaravaggi, F. Cazzaniga, D. Ielmini

Journal:

Microelectronics Reliability

Year:

2003

Language:

english

File:

PDF, 325 KB

english, 2003

32

Surface diffusion-limited lifetime of silver and copper nanofilaments in resistive switching devices

Wang, Wei, Wang, Ming, Ambrosi, Elia, Bricalli, Alessandro, Laudato, Mario, Sun, Zhong, Chen, Xiaodong, Ielmini, Daniele

Journal:

Nature Communications

Year:

2019

Language:

english

File:

PDF, 1.76 MB

english, 2019

33

Phase-change memories (PCM) – Experiments and modelling: general discussion

Bartlett, Philip, Berg, Alexandra I., Bernasconi, Marco, Brown, Simon, Burr, Geoffrey, Foroutan-Nejad, Cina, Gale, Ella, Huang, Ruomeng, Ielmini, Daniele, Kissling, Gabriela, Kolosov, Vladimir, Kozick

Journal:

Faraday Discussions

Year:

2019

Language:

english

File:

PDF, 2.53 MB

english, 2019

34

Voltage-Controlled Cycling Endurance of HfOₓ-Based Resistive-Switching Memory

Balatti, Simone, Ambrogio, Stefano, Wang, Zhongqiang, Sills, Scott, Calderoni, Alessandro, Ramaswamy, Nirmal, Ielmini, Daniele

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 3.36 MB

english, 2015

35

Analytical model for subthreshold conduction and threshold switching in chalcogenide-based memory devices

Ielmini, Daniele, Zhang, Yuegang

Journal:

Journal of Applied Physics

Year:

2007

Language:

english

File:

PDF, 1.21 MB

english, 2007

36

Recommended Methods to Study Resistive Switching Devices

Lanza, Mario, Wong, H.-S. Philip, Pop, Eric, Ielmini, Daniele, Strukov, Dimitri, Regan, Brian C., Larcher, Luca, Villena, Marco A., Yang, J. Joshua, Goux, Ludovic, Belmonte, Attilio, Yang, Yuchao, Pug

Journal:

Advanced Electronic Materials

Year:

2018

Language:

english

File:

PDF, 5.05 MB

english, 2018

37

Stochastic Memory Devices for Security and Computing

Carboni, Roberto, Ielmini, Daniele

Journal:

Advanced Electronic Materials

Year:

2019

Language:

english

File:

PDF, 6.51 MB

english, 2019

38

Impact of Ge–Sb–Te compound engineering on the set operation performance in phase-change memories

Mattia Boniardi, Daniele Ielmini, Innocenzo Tortorelli, Andrea Redaelli, Agostino Pirovano, Mario Allegra, Michele Magistretti, Camillo Bresolin, Davide Erbetta, Alberto Modelli, Enrico Varesi, Fabio

Journal:

Solid-State Electronics

Year:

2011

Language:

english

File:

PDF, 872 KB

english, 2011

39

Unsupervised learning to overcome catastrophic forgetting in neural networks

Munoz-Martin, Irene, Bianchi, Stefano, Pedretti, Giacomo, Melnic, Octavian, Ambrogio, Stefano, Ielmini, Daniele

Journal:

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits

Year:

2019

Language:

english

File:

PDF, 8 KB

english, 2019

40

Phase I clinical and pharmacological evaluation of the multi-tyrosine kinase inhibitor SU006668 by chronic oral dosing

Cristiana Sessa, Lucia Viganò, Giacomo Grasselli, Josè Trigo, Irene Marimon, Anna Lladò, Alberta Locatelli, Nicoletta Ielmini, Silvia Marsoni, Luca Gianni

Journal:

European Journal of Cancer

Year:

2006

Language:

english

File:

PDF, 450 KB

english, 2006

41

[IEEE 2018 IEEE International Symposium on Circuits and Systems (ISCAS) - Florence, Italy (2018.5.27-2018.5.30)] 2018 IEEE International Symposium on Circuits and Systems (ISCAS) - Brain-inspired recurrent neural network with plastic RRAM synapses

Milo, Valerio, Chicca, Elisabetta, Ielmini, Daniele

Year:

2018

Language:

english

File:

PDF, 1.95 MB

english, 2018

42

A new two-trap tunneling model for the anomalous stress-induced leakage current (SILC) in Flash memories

D. Ielmini, A.S. Spinelli, A.L. Lacaita, A. Modelli

Journal:

Microelectronic Engineering

Year:

2001

Language:

english

File:

PDF, 298 KB

english, 2001

43

[IEEE 2011 IEEE International Electron Devices Meeting (IEDM) - Washington, DC, USA (2011.12.5-2011.12.7)] 2011 International Electron Devices Meeting - Filamentary-switching model in RRAM for time, energy and scaling projections

Ielmini, Daniele

Year:

2011

Language:

english

File:

PDF, 307 KB

english, 2011

44

[IEEE 2020 IEEE International Symposium on Circuits and Systems (ISCAS) - Sevilla (2020.10.12-2020.10.14)] 2020 IEEE International Symposium on Circuits and Systems (ISCAS) - A Spiking Recurrent Neural Network with Phase Change Memory Synapses for Decision Making

Pedretti, G., Milo, V., Hashemkhani, S., Mannocci, P., Melnic, O., Chicca, E., Ielmini, D.

Year:

2020

File:

PDF, 1.03 MB

2020

45

Transient Simulation of Delay and Switching Effects in Phase-Change Memories

Lavizzari, S., Ielmini, D., Lacaita, A.L.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 502 KB

english, 2010

46

[IEEE 2011 IEEE International Electron Devices Meeting (IEDM) - Washington, DC, USA (2011.12.5-2011.12.7)] 2011 International Electron Devices Meeting - Complementary switching in metal oxides: Toward diode-less crossbar RRAMs

Nardi, F., Balatti, S., Larentis, S., Ielmini, D.

Year:

2011

Language:

english

File:

PDF, 496 KB

english, 2011

47

Self-Aligned Nanotube–Nanowire Phase Change Memory

Xiong, Feng, Bae, Myung-Ho, Dai, Yuan, Liao, Albert D., Behnam, Ashkan, Carrion, Enrique A., Hong, Sungduk, Ielmini, Daniele, Pop, Eric

Journal:

Year:

2013

Language:

english

File:

PDF, 4.59 MB

english, 2013

48

A Unified Hopping Model for Subthreshold Current of Phase-Change Memories in Amorphous State

Calderoni, Alessandro, Ferro, Massimo, Ielmini, Daniele, Fantini, Paolo

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 395 KB

english, 2010

49

Analysis and modeling of resistive switching statistics

S. Long, C. Cagli, D. Ielmini, M. Liu, J. Suñé

Year:

2012

Language:

english

File:

PDF, 2.76 MB

english, 2012

50

A 4-Transistors/1-Resistor Hybrid Synapse Based on Resistive Switching Memory (RRAM) Capable of Spike-Rate-Dependent Plasticity (SRDP)

Milo, Valerio, Pedretti, Giacomo, Carboni, Roberto, Calderoni, Alessandro, Ramaswamy, Nirmal, Ambrogio, Stefano, Ielmini, Daniele

Journal:

IEEE Transactions on Very Large Scale Integration (VLSI) Systems

Year:

2018

Language:

english

File:

PDF, 3.17 MB

english, 2018

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